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| RK4936 Transistors Switching (30V, 6A) RK4936 Features 1) Low Qg. 2) Low on-resistance. 3) Excellent resistance to damage from static electricity. External dimensions (Units : mm) + 0.4- 0.1 0.1 1.27 0.15 + 1.5- 0.1 Max.1.75 + 5.0- 0.2 (5) (4) (8) Structure Silicon N-channel MOS FET + 3.9- 0.15 + 6.0- 0.3 + 0.5- 0.1 (1) Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) Each lead has same dimensions ROHM : SOP8 (1) (2) (3) (4) (1) (2) (3) Gate Protection Diode. A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. (1) (2) (3) (4) (5) (4) (6) (7) (8) Tr1 Source Tr1 Gate Tr2 Source Tr2 Gate Tr2 Drain Tr2 Drain Tr1 Drain Tr1 Drain Absolute maximum ratings (Ta = 25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Reverse Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IDR IDRP Is Isp PD Tch Tstg Limits 30 20 6 24 6 24 1.3 5.2 2 150 -55~+150 Unit V V A A A A A A W C C Total Power Dissipation(Tc=25C) Channel Temperature Storage Temperature Pw10s, Duty cycle1% + 0.2- 0.1 RK4936 Transistors Thermal resistance (Ta = 25C) Parameter Channel to Ambient Symbol Rth(ch-A) Limits 62.5 Unit C/W Electrical characteristics (Ta = 25C) Parameter Gate-Source Leakage Symbol IGSS Min. - 30 - 1.0 - RDS(on) l Yfs l Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd - - 5 - - - - - - - - - - Typ. - - - - 22 32 40 - 740 420 180 14 30 55 25 21 2.7 5.6 42 - - Max. 10 - 10 2.5 28 42 52 - - - - - - - S pF pF pF ns ns ns ns nC nC nC m Unit A V A V Test Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=6A, VGS=10V ID=6A, VGS=4.5V ID=6A, VGS=4V ID=6A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3A, VDD 15V VGS=10V RL=5 RGS=10 VDD=15V VGS=10V ID=6A Drain-Source Breakdown Voltage V(BR) DSS Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge IDSS VGS(th) Pulsed Body diode characteristics (Source-Drain characteristics) (Ta = 25C) Parameter Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol VSD trr Qrr Min. - - - Typ. - 140 140 Max. 1.5 - - Unit V ns nC Test Conditions Is=5.2A, VGS=0V IDR=5.2A, VGS=0V di/dt=100A/s Pulsed RK4936 Transistors Electrical characteristic curves FORWARD TRANSFER ADMITTANCE : I YfS I (S) 10 100 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () REVERSE DREIN CURRENT : IDR (A) VDS=0V Pulsed Ta=125C 75C 25C -25C VDS=10V Pulsed Ta=-25C 25C 75C 125C VGS=10V Pulsed 10 1 0.1 1 Ta=125C 75C 25C -25C 0.1 0.01 0.1 0.01 0.0 0.5 1.0 1.5 0.01 0.01 0.1 1 10 0.001 0.1 1 DRAIN CURRENT : ID (A) 10 SOURCE - DRAIN VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) Fig.1 Reverse Drein Current vs. Source-Drain Voltage Fig.2 Forward Transfer Admittance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ( ) 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VGS=4V Pulsed Ta=125C 75C 25C -25C 0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VGS=10V ID=6A Pulsed Ta=25C Pulsed 0.080 0.1 0.060 ID =6A 3A 0.040 0.01 0.020 0.001 0.1 1 DRAIN CURRENT : ID (A) 10 0.000 -50 -25 0 25 50 75 100 125 150 0.000 0 2 4 6 8 10 12 14 16 18 20 CHANNEL TEMPERATURE : Tch (C) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( ) Fig.5 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage GATE THRESHOLD VOLTAGE : VGS(th) (V) 4.000 DRAIN-SOURCE VOLTAGE : VDS (V) CAPACITANCE : C (pF) 25 20 VDS 15 10 5 0 0 3.000 VGS 10 1000 Ciss Coss 100 Crss 2.000 5 Ta=25C VDD=24V ID=6A Pulsed 0 24 32 1.000 0.000 -50 -25 0 25 50 75 100 125 150 10 0.1 1 10 100 8 16 CHANNEL TEMPERATURE : Tch (C) DRAIN-SOURCE VOLTAGE : VDS (V) TOTAL GATE CHARGE : Qg (nC) Fig.7 Gate Threshold Voltage vs. Channel Temperature Fig.8 Typical Capacitance vs. Drain-Source Voltage Fig.9 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS (V) VDS=10V ID=1mA Pulsed 10000 Ta=25C f=1MHz VGS=0V Pulsed 30 15 RK4936 Transistors 1000 20 SWITCHING TIME : t (ns) DRAIN CURRENT : ID (A) Ta=25C VDD=15V VGS=10V RG=10 Pulsed tr td(off) tf 18 16 14 12 10 8 6 4 2 VGS=5V VGS=4.5V VGS=4V VGS=3.5V 100 10 td(on) VGS=3V VGS=2.5V 2 4 6 8 10 1 0.1 1 DRAIN CURRENT : ID (A) 10 0 0 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Switching Characteristics Fig.11 Typical Output Characteristics 10 NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 1 D=1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 D=Single Tc=25C th(ch-c) (t)=r(t) th(ch-c) th(ch-c)=6.25C / W PW T D=PW T 0.01 0.001 10 100 1m 10m 100m 1 10 100 PULSE WIDTH : PW (s) Fig.12 Normalized Transient Thermal Resistance vs. Pulse Width |
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